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Mobile: 86-13620067891
E-mail: fks@fks-coils.com
Add:C2 Building, Western Cloud Valley, Fengxi New Town, Xixian New Area, Xi'an City, Shaanxi Province, China
GDT Auxiliary Gate Drive Transformer for SiC-MOSFET and IGBT

GDT Auxiliary Gate Drive Transformer for SiC-MOSFET and IGBT Description:
FKS GDT Auxiliary Gate Drive Transformer feature very high common-mode transient immunity (CMTI) with ratings up to 100V/ns and better EMI performance. They have different unipolar and bipolar voltages,wide range input voltages 6 V to 36 V and up to 6 W output power. High-Power Auxiliary Gate Drive Transformers also offer a compact and reliable solution.
Tiny surface mount EP7 package
Dielectric insulation up to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
Operating temperature: -40 °C up to +130 °C
Common control voltages for SiC MOSFET’s
High Common-mode Transient Immunity (CMTI)
Flyback, LLC, Half-Bridge topologies
Wide range input voltages 6 V to 36 V
Up to 6 W output power
Safety: IEC62368-1 / IEC61558-2-16
AEC-Q200 qualification
Order Code | RDC1 (mΩ) |
RDC2 (mΩ) |
RDC3 (mΩ) |
n | ∫Udt (µVs) |
CWW 1 (pF) |
VT
(V(DC)) |
FKS760301103 | 700 | 170 | 170 | 2.5:1:1 | 29.4 | 7 | 1500 |
FKS760301104 | 620 | 270 | 270 | 2:01:01 | 28.6 | 7 | 1500 |
FKS760301105 | 600 | 600 | 600 | 1:01:01 | 25.2 | 9 | 1500 |
FKS760301106 | 520 | 640 | – | 1:01 | 30.2 | 10 | 1500 |
FKS760301107 | 1200 | 600 | – | 1.5:1 | 40.8 | 9 | 1500 |
FKS760301108 | 730 | 150 | – | 2.5:1 | 33.6 | 9 | 1500 |



