GDT Auxiliary Gate Drive Transformer for SiC-MOSFET and IGBT
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GDT Auxiliary Gate Drive Transformer for SiC-MOSFET and IGBT

Description: FKS GDT Auxiliary Gate Drive Transformer feature very high common-mode transient immunity (CMTI) with ratings up to 100V/ns and better EMI performance. They have different unipolar and bipolar voltages,wide range input voltages 6 V to 36 V and up to 6 W output power. High-Power Auxiliary Gate Drive Transformers also offer a compact and reliable solution.


Applications

Industrial drives

AC motor inverters

Uninterruptible power supplies

Active power factor correction

SiC-MOSFET based power converter

HEV/EV charging station

Battery chargers

Solar inverters

Data centers


Characteristics

Interwinding capacitance down to <1 pF

Tiny surface mount EP7 package

Dielectric insulation up to 4 kV AC

Basic insulation for 568 Vrms / 800 Vpk

Operating temperature: -40 °C up to +130 °C

Common control voltages for SiC MOSFET’s

High Common-mode Transient Immunity (CMTI)

Flyback, LLC, Half-Bridge topologies

Wide range input voltages 6 V to 36 V

Up to 6 W output power

Safety: IEC62368-1 / IEC61558-2-16

AEC-Q200 qualification


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