Description: FKS-AGDT Auxiliary Gate Drive Transformer allows implementing discrete SiC gate driver designs easier. With extremely low interwinding capacitance, the Gate Drive Transformer helps to achieve higher Common Mode Transient Immunity (CMTI).
Applications
Industrial drivesUninterruptible power supplies (UPS)
Active power factor correction
SiC-MOSFET based power converter
Characteristics
Safety: IEC62368-1/IEC61558-2-16 basic insulationHigh Common mode Transient Immunity (CMTI) over 100 kV/ µs
low Interwinding capacitance <1 pF
Surface mount EP7 form factor
Flyback primary side regulation, LLC, Half-Bridge topologies
Common control voltages for SiC MOSFET’s
High dielectric insulation to 4 kV AC
Basic insulation for 568 Vrms / 800 Vpk
AEC-Q200 qualification
IEC62368-1 / IEC61558-2-16
Operating temperature: -40 °C up to +130 °C
Up to 6 W output power
Wide range input voltages 6 V to 36 V
Different Unipolar & bipolar output voltages
High efficiency and very compact solution
Reference designs with Analog Devices, Texas Instruments, and onsemi
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